Thin-Film Transistors Obtained by Hot Wire CVD
نویسنده
چکیده
(1) Departament d'Enginyeria Electrònica. Jordi Girona 1-3, Mòdul C4. Universitat Politècnica de Catalunya (Barcelona, Spain). (2) Departament d'Enginyeria Electrònica. Universitat Rovira i Virgili (Tarragona, Spain). (3) Departament de Física Aplicada i Òptica. Universitat de Barcelona (Barcelona, Spain) Abstract Hydrogenated microcrystalline silicon films obtained at low temperature (150oC-280oC) by hot-wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction spectroscopy and photothermal deflection spectroscopy. A high crystalline fraction (> 90%) with a low subgap optical absortion (10 cm -1 at 0.8 eV) were obtained in films deposited at high growth rates (>0.8 nm/s). These films were incorporated in nchannel thin film transistors and their electrical properties were measured. The saturation mobility found was 0.72 0.05 cm 2 /V·s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.
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